TSMC's 3D Stacked SoIC Packaging Making Quick Progress, Eyeing Ultra-Dense 3μm Pitch In 2027 (2024)

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by Anton Shilov on May 31, 2024 11:00 AM EST

  • Posted in
  • Semiconductors
  • TSMC
  • Packaging
  • N2
  • 3D Packaging
  • SoIC
  • TSMC A16
  • TSMC Symposium 2024

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TSMC's 3D Stacked SoIC Packaging Making Quick Progress, Eyeing Ultra-Dense 3μm Pitch In 2027 (1)

TSMC's 3D-stacked system-on-integrated chips (SoIC) advanced packaging technologies is set to evolve rapidly. In a presentation at the company's recent technology symposium, TSMC outlined a roadmap that will take the technology from a current bump pitch of 9μm all the way down to a 3μm pitch by 2027, stacking together combinations of A16 and N2 dies.

TSMC has a number of advanced packaging technologies, including 2.5D CoWoS and 2.5D/3D InFO. Perhaps the most intriguing (and complex) method is their 3D-stacked system-on-integrated chips (SoIC) technology, which is TSMC's implementation of hybrid wafer bonding. Hybrid bonding allows two advanced logic devices to be stacked directly on top of each other, allowing for ultra-dense (and ultra-short) connections between the two chips, and is primarily aimed at high performance parts. For now, SoIC-X (bumpless) is used for select applications, such as AMD's 3D V-cache technology for CPUs, as well as their Instinct MI300-series AI products. And while adoption is growing, the current generation of the technology is constrained by limitations on die sizes and interconnection pitches.

But those limitations are expected to give way quickly, if all goes according to plan for TSMC. SoIC-X technology is going to advance fast, and by 2027, it will be possible assemble a chip pairing a reticle-sized top die made on TSMC's leading-edge A16 (1.6nm-class) on a bottom die produced using TSMC's N2 (2nm-class). These dies, in turn, would be connected using 3μm bond pitche ssilicon vias (TSVs), three times the density of the size of today's 9μm pitch. Such small interconnections will allow for a much larger number of connections overall, greatly increasing the bandwidth density (and thus performance) of the assembled chip.

TSMC's SoIC-X Roadmap
Data by TSMC (Compiled by AnandTech)
202220232024202520262027
Top DieN7N5N4N3N2A16
Bottom DieN7≥N6≥N5≥N4≥N3≥N2
Bond Pitch9 μm9 μm6 μm6 μm4.5 μm3 μm
Size*0.1 reticle0.4 reticle0.8 reticle1 reticle1 reticle1 reticle

*TSMC considers reticle size as roughly 830 mm2.

Improved hybrid bonding techniques are intended to allow TSMC's big HPC customers – AMD, Broadcom, Intel, NVIDIA, and the like – to build large, ultra-dense disaggregated processor designs for demanding applications, where distance between the dies is critical, as is the overall floor space used. Meanwhile, for applications where only performance matters, it will be possible to place multiple SoIC-X packages on a CoWoS interposer to get improved performance at a lower power consumption.

In addition to developing its bumpless SoIC-X packaging technology aimed at devices that require extreme performance, TSMC will also launch its bumped SoIC-P packaging process in the near future. SoIC-P is designed for cheaper lower performance applications that still want 3D-stacking, but don't need the additional performance and complexity that comes with bumpless copper-to-copper TSV connections. This packing technique will enable a broader range of companies to leverage SoIC, and while TSMC can't speak for their customers' plans, a cheaper version of the technology may make it accessible for more cost-conscious consumer applications.

Per TSMC's current plans, by 2025 the company will offer a face-to-back (F2B) bumped SoIC-P technology capable of pairing a 0.2-reticle sized N3 (3nm-class) top die with an N4 (4nm-class) bottom die, which will be connected using 25μm pitch microbumps (µbumps). In 2027, TSMC will introduce bumped face-to-face (F2F) SoIC-P technology, which will be able to place an N2 top die on an N3 bottom die with a pitch of 16μm.

TSMC's SoIC-P Roadmap
Data by TSMC (Compiled by AnandTech)
20252027
Top DieN3N2
Bottom Die≥N4≥N3
Bond Pitch25 μm16 μm
Size*0.2 reticle0.4 reticle
Die Orientationface-to-backface-to-face
Qualification TimeQ4 2024 for mobile SoCQ2 2026 for HPC

*TSMC considers reticle size as roughly 830 mm2

A lot of work has to be done to make SoIC more popular and accessible among chip developers, including continuing to iprove their die-to-die interfaces. But TSMC seems to be very optimistic about SoIC adoption by the industry, and expects around 30 SoIC designs to be released by 2026 – 2027.

Source: TSMC Symposium 2024

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  • ballsystemlord - Friday, May 31, 2024 - link

    Spelling mistake:

    "These dies, in turn, would be connected using 3μm bond pitche ssilicon vias (TSVs), three times the density of the size of today's 9μm pitch."
    Should read:
    "These dies, in turn, would be connected using 3μm bond pitch through-silicon vias (TSVs), three times the density of the size of today's 9μm pitch."

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TSMC's 3D Stacked SoIC Packaging Making Quick Progress, Eyeing Ultra-Dense 3μm Pitch In 2027 (2024)

FAQs

TSMC's 3D Stacked SoIC Packaging Making Quick Progress, Eyeing Ultra-Dense 3μm Pitch In 2027? ›

In a presentation at the company's recent technology symposium, TSMC outlined a roadmap that will take the technology from a current bump pitch of 9μm all the way down to a 3μm pitch by 2027, stacking together combinations of A16 and N2 dies.

Does TSMC do packaging? ›

TSMC advanced packaging services create the best solutions to unleash our customer's innovations by advancing the core technology, providing integrated turnkey services, and leveraging intelligent packaging fab.

What is 3D stacking? ›

Most 3D stacking is done by gluing one chiplet onto another while one is still on the wafer, known as chip-on-wafer. But Bow used TSMC's wafer-to-wafer, in which an entire wafer of one type is bonded to an entire wafer of another type, then has dicing.

What is 3D fabric TSMC? ›

3DFabric offers our customers the freedom and advantage to design their products more holistically as a system of mini-chips that offers key advantages versus designing a larger monolithic die. TSMC's 3DFabric consists of both frontend and backend technologies.

Does Amazon use TSMC? ›

TSMC's advanced chip stacking and assembly techniques -- used to produce AI chips for Nvidia, AMD, Amazon and Google -- employ 12-inch silicon wafers, the largest available.

What are the benefits of 3D IC? ›

A 3DIC architecture increases functional density at the same or reduced power, keeping the same or smaller area. This results in a smaller package for electronic devices. In 2D ICs, each die is packaged separately and laid out on a printed circuit board (PCB).

What is 3D chip packaging? ›

3D packaging refers to 3D integration schemes that rely on traditional interconnection methods such as wire bonding and flip chip to achieve vertical stacking. 3D packaging can be divided into 3D system in package (3D SiP) and 3D wafer level package (3D WLP).

What is stacking in packaging? ›

Stacking is usually adopted to make full use of space and transport capacity during the product transportation and storage. However, stacking will cause a surge in the pressure exerting on the goods at the bottom.

What is packaging in semiconductor industry? ›

This packaging essentially acts as a safeguarding enclosure, shielding the IC block and facilitating the electrical connections responsible for transmitting signals to the circuit board of electronic devices.

Does TSMC make wafers? ›

Annual capacity of the manufacturing facilities managed by TSMC and its subsidiaries exceeded 16 million 12-inch equivalent wafers in 2023.

Is TSMC considering advanced chip packaging capacity in Japan? ›

Exclusive-TSMC considering advanced chip packaging capacity in Japan, sources say. TOKYO (Reuters) -Taiwan's TSMC is looking at building advanced packaging capacity in Japan, according to two sources familiar with the matter, a move that would add momentum to Japan's efforts to reboot its semiconductor industry.

What is the highest package at TSMC? ›

The highest-paying job at TSMC is a Digital Design Engineer with a salary of ₹30,15,375 per year (estimate).

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